新能源汽車(chē)、5G通信等產(chǎn)業(yè)的高速發(fā)展，推動(dòng)碳化硅（SiC）襯底需求持續(xù)攀升，而大尺寸、高良率晶體生長(zhǎng)技術(shù)成為全球半導(dǎo)體裝備領(lǐng)域的核心競(jìng)爭(zhēng)方向。
山東力冠微電子裝備有限公司繼8英寸液相法SiC長(zhǎng)晶爐量產(chǎn)后，正加速攻關(guān)12英寸液相法SiC長(zhǎng)晶設(shè)備，依托自主研發(fā)的工藝體系，為我國(guó)半導(dǎo)體裝備國(guó)產(chǎn)化進(jìn)程注入新動(dòng)能。

液相法SiC長(zhǎng)晶技術(shù)解析

 

 

 

 

相較于主流物理氣相傳輸法（Physical Vapor Transport, PVT），頂部籽晶溶液生長(zhǎng)( top seeded solution growth，TSSG)（最廣泛采用的一種液相法）基于高溫金屬熔融體系溶解碳化硅前驅(qū)體，通過(guò)溶質(zhì)分凝與過(guò)飽和度調(diào)控在籽晶界面定向外延生長(zhǎng)，展現(xiàn)出顯著的技術(shù)優(yōu)勢(shì)：

生長(zhǎng)速率提升：實(shí)驗(yàn)室條件下，液相法生長(zhǎng)速率通常為0.3-1.5 mm/h，較PVT法的 0.1-0.5 mm/h 提升約1.5-3倍。

能耗優(yōu)化：液相法生長(zhǎng)溫度較PVT法降低 300-500℃（1500-1800℃ vs 2000-2300℃），理論能耗減少 20%-30%。

缺陷控制能力：液相法通過(guò)溶液環(huán)境抑制熱應(yīng)力與缺陷擴(kuò)展，實(shí)驗(yàn)室環(huán)境下其位錯(cuò)密度可降至<1×10? cm?²（部分案例<200 cm?²），顯著優(yōu)于PVT法的常規(guī)水平（>5×10? cm?²）。

擴(kuò)徑潛力：液相法基于動(dòng)態(tài)調(diào)控技術(shù)更易實(shí)現(xiàn)大尺寸晶體生長(zhǎng)，而PVT法因氣相傳輸對(duì)熱場(chǎng)均勻性要求極高，擴(kuò)徑周期長(zhǎng)且邊緣缺陷問(wèn)題突出。

p型摻雜優(yōu)勢(shì)：液相法低溫溶液體系可精準(zhǔn)調(diào)控鋁（Al）摻雜，實(shí)現(xiàn)電阻率低至 0.1 Ω·cm（PVT法約2.5 Ω·cm）。

技術(shù)挑戰(zhàn)：液相法需精準(zhǔn)控制熔融液成分、溫度梯度及籽晶界面穩(wěn)定性，工藝參數(shù)耦合度高，對(duì)設(shè)備設(shè)計(jì)和工藝經(jīng)驗(yàn)要求嚴(yán)苛。

山東力冠12英寸SiC液相法長(zhǎng)晶爐核心優(yōu)勢(shì) 

 

 

 

大尺寸與高良率協(xié)同：設(shè)備支持12英寸SiC單晶生長(zhǎng)，通過(guò)多溫區(qū)協(xié)同控制技術(shù)，實(shí)現(xiàn)生長(zhǎng)界面溫度梯度高精度控制，破解晶型混雜和晶體開(kāi)裂難題。

自主可控的技術(shù)體系 ：采用特殊坩堝設(shè)計(jì)與惰性氣體保護(hù)系統(tǒng)，避免雜質(zhì)污染，降低雜質(zhì)殘留。其自主研發(fā)的全閉環(huán)控制生長(zhǎng)系統(tǒng)，可實(shí)時(shí)監(jiān)控生長(zhǎng)速率與重量等相關(guān)問(wèn)題。

山東力冠的技術(shù)積累與市場(chǎng)驗(yàn)證

 

 

 

山東力冠產(chǎn)品涵蓋第一代至第四代半導(dǎo)體材料工藝設(shè)備，均擁有自主知識(shí)產(chǎn)權(quán)，完全自主可控，產(chǎn)品廣泛應(yīng)用于集成電路、功率半導(dǎo)體、化合物半導(dǎo)體、5G芯片、光通信、MEMS等新型電子器件制造領(lǐng)域。
公司可為客戶(hù)提供“設(shè)備制造+工藝技術(shù)服務(wù)”一體化解決方案。其關(guān)鍵技術(shù)打破美日壟斷，實(shí)現(xiàn)國(guó)產(chǎn)化替代，生產(chǎn)工藝穩(wěn)定性、均勻性達(dá)國(guó)際領(lǐng)先水平。部分拳頭產(chǎn)品國(guó)內(nèi)市占率達(dá)95%，并出口韓國(guó)、新加坡等國(guó)家。

行業(yè)價(jià)值與未來(lái)展望

 

 

 

12英寸液相法設(shè)備的推出，標(biāo)志著國(guó)產(chǎn)半導(dǎo)體裝備在SiC領(lǐng)域?qū)崿F(xiàn)從進(jìn)口替代到自主創(chuàng)新的關(guān)鍵跨越。通過(guò)技術(shù)迭代與產(chǎn)業(yè)鏈協(xié)同，山東力冠正推動(dòng)國(guó)產(chǎn)裝備向高附加值環(huán)節(jié)延伸，為第三代半導(dǎo)體產(chǎn)業(yè)的規(guī)?；瘧?yīng)用提供核心裝備支撐。

Major Breakthrough in Domestic Semiconductor Equipment! Shandong Liguan Microelectronics Equipment Co., Ltd. Launches 12-inch Liquid Phase SiC Crystal Growth Furnace

The rapid development of new energy vehicles, 5G communications and related industries has driven sustained growth in demand for silicon carbide (SiC) substrates, making large-diameter, high-yield crystal growth technology a core competitive focus in global semiconductor equipment.

Following the mass production of its 8-inch LPE method SiC crystal growth furnace, Shandong Liguan Microelectronics Equipment Co., Ltd. (hereinafter referred to as "Shandong Liguan") is now accelerating R&D on 12-inch LPE method SiC growth equipment. Leveraging its independently developed process systems, the company is injecting new momentum into China's semiconductor equipment localization efforts.

In-Depth Analysis of LPE method SiC Crystal Growth Technology

Compared to the mainstream Physical Vapor Transport method (PVT), the Top Seeded Solution Growth technique (TSSG) - the most widely adopted liquid-phase method - demonstrates remarkable technical advantages through its unique working mechanism:

Growth Rate Enhancement:
Under laboratory conditions, the liquid-phase method achieves growth rates of 0.3-1.5 mm/h, representing a 1.5-3× improvement over PVT's 0.1-0.5 mm/h range.

Energy Efficiency Optimization:
The liquid-phase process operates at 300-500°C lower temperatures (1500-1800°C vs. PVT's 2000-2300°C), theoretically reducing energy consumption by 20-30%.

Defect Control Capability:
The solution environment inherently suppresses thermal stress and defect propagation, achieving dislocation densities <1×10? cm?² in lab conditions (exceptional cases <200 cm?²) - significantly superior to PVT's typical （>5×10? cm?²）.

Diameter Scaling Potential:
Dynamic control technologies in liquid-phase growth enable easier large-diameter crystal production, whereas PVT's vapor transport mechanism

demands extreme thermal field uniformity, resulting in prolonged scaling cycles and pronounced edge defects.

p-Type Doping Advantage:
The low-temperature solution system allows precise aluminum (Al) doping control, achieving resistivities as low as 0.1 Ω·cm (vs. ~2.5 Ω·cm for PVT).

Technical Challenges:
The liquid-phase method requires exacting control of Melt composition，Temperature gradients，Seed crystal interface stability With highly coupled process parameters demanding advanced equipment design and extensive process expertise.

Key strengths of Shandong Liguan's12-inch SiC liquid-phase epitaxy (LPE) method growth furnace.

Synergy of Large Size and High Yield: The equipment supports the growth of 12-inch SiC single crystals. Through multi-temperature zone collaborative control technology, it achieves high-precision control of the temperature gradient at the growth interface, solving the problems of crystal form mixing and crystal cracking.

Self-Developed and Controllable Technology System: Special crucible design and inert gas protection system are adopted to prevent impurity contamination and reduce impurity residue. Its independently developed full closed-loop control growth system can monitor in real time issues such as growth rate and weight.

Shandong Liguan's Technological Expertise and Market Validation

Shandong Liguan's products cover the first to the fourth generation of semiconductor material process equipment, all of which have independent intellectual property rights and are fully controllable. The products are widely used in the manufacturing fields of new electronic devices such as integrated circuits, power semiconductors, compound semiconductors, 5G chips, optical communications, and MEMS.

The company can provide customers with an integrated solution of "equipment manufacturing + process technology services". Its key technologies have broken the monopoly of the United States and Japan, achieving domestic substitution, and the stability and uniformity of its production process have reached the international leading level. Some of our flagship products have a domestic market share of 95% and are exported to countries such as South Korea and Singapore.

Industry Value and Future Prospects

The launch of 12-inch liquid-phase epitaxy (LPE) method growth equipment marks a pivotal leap for domestic semiconductor tools in SiC – from import substitution to autonomous innovation. Through technological iteration and industrial chain collaboration, Shandong Liguan is advancing domestic equipment into high-value segments, providing core manufacturing support for the scaled application of third-generation semiconductors.